GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes

Feng Yun; Lei He; M. A. Reshchikov; H. Morkoç̌; Jacek B. Jasiński; Z. Liliental‐Weber

doi:10.1557/proc-764-c7.4

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GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes

Feng Yun Lei He M. A. Reshchikov H. Morkoç̌Jacek B. Jasiński Z. Liliental‐Weber

Year: 2003 Journal: MRS Proceedings Vol: 764 Publisher: Cambridge University Press

DOI: 10.1557/proc-764-c7.4

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Keywords:

Materials science Dislocation Molecular beam epitaxy Optoelectronics Layer (electronics) Epitaxy Photoluminescence Transmission electron microscopy Composite material Nanotechnology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes

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