言語学習日記(Class Participation Journal)とGrade申請 : 学習者の自律性を養う授業運営の工夫(「国家戦略」としての外国語教育-そのあるべき姿を求めて-)

Abstract

In this paper, we discuss on the optimal design of a High-Side n-channel Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET) whose breakdown voltage is over 100 V with 0.35 microm Bipolar-CMOS-DMOS (BCD) process. The proposed nLDMOSFET has been fabricated and tested in order to confirm the features of a deep N+ sinker and a gap of between the drift region (DEEP N-WELL) and the center of the source. The surface is implanted by the N-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side LDMOS exhibits BVdss of 115 V and Ron,sp of as low as 2.20 m ohms cm2, which is consistent with the experimental results.