&lt;title&gt;GaAs-based tunnel junctions&lt;/title&gt;

C. E. Moeller; J. Boettcher; H. Kuenzel

doi:10.1117/12.514616

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<title>GaAs-based tunnel junctions</title>

C. E. Moeller J. Boettcher H. Kuenzel

Year: 2002 Journal: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Pages: 516-518 Publisher: SPIE

DOI: 10.1117/12.514616

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Abstract

The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7×10-5 /cm2 and a peak current density of > 1900 A/cm2. The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.

Keywords:

Molecular beam epitaxy Gallium arsenide Doping Optoelectronics Omega Current density Materials science Tunnel junction Light-emitting diode Epitaxy Condensed matter physics Quantum tunnelling Physics Nanotechnology Layer (electronics)

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

<title>GaAs-based tunnel junctions</title>

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