JOURNAL ARTICLE

Semiconductor interfacial carrier dynamics via photoinduced electric fields

Ye YangJing GuJames L. YoungElisa M. MillerJohn A. TurnerNathan R. NealeMatthew C. Beard

Year: 2015 Journal:   Science Vol: 350 (6264)Pages: 1061-1065   Publisher: American Association for the Advancement of Science

Abstract

Charge separation viewed in reflection When light strikes a semiconductor, excited electrons travel across the interface. Y. Yang et al. applied ultrafast reflection spectroscopy to probe this process in a gallium indium phosphide system used for hydrogen generation from water (see the Perspective by Hansen et al. ). Platinum and titanium dioxide (TiO 2 ) coatings enhanced charge separation of the excited electrons from the positive holes they left behind. TiO 2 , however, was more effective at suppressing the reverse process of unproductive recombination. Science , this issue p. 1061 ; see also p. 1030

Keywords:
Semiconductor Excited state Gallium phosphide Indium phosphide Charge carrier Electron Optoelectronics Materials science Titanium dioxide Gallium Reflection (computer programming) Spectroscopy Ultrashort pulse Electric field Indium Laser Atomic physics Optics Gallium arsenide Physics

Metrics

147
Cited By
5.01
FWCI (Field Weighted Citation Impact)
33
Refs
0.97
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Photocatalysis Techniques
Physical Sciences →  Energy →  Renewable Energy, Sustainability and the Environment

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