Growth of indium nitride nanopetal structures on indium oxide buffer layer

Abstract

This paper presents a simple method for controlling crystalline quality and morphology of InN. A buffer layer of indium oxide is deposited in-situ on Si substrate before growing InN by atmospheric pressure-halide vapour phase epitaxy. Glancing angle X-ray diffraction and scanning electron microscopic studies have been carried out. Buffer layer of indium oxide helps in the growth of indium nitride nanopetals.