Construction of Logic Gate Based on Multi-channel Carbon Nanotube Field-Effect Transistors

Abstract

Carbon nanotubes (CNTs) are one-dimensional nanostructures with many excellent properties that make them the most promising candidates for in steading of silicon materials. In the previous studies, the individual single-walled carbon nanotube (SWCNT) has been extensively used as conduction channels of carbon nanotube field-effect transistors (CNTFETs). However, the single-channel CNTFETs will fail if the only channel breaks down. Therefore, an individual SWCNT as the channel of the CNTFETs have some drawbacks. In this paper, the parallel CNT array with a controllable number and space of SWCNTs is used as the active channels of multi-channel carbon nanotube field-effect transistors (MC-CNTFETs). The logic AND gate and logic OR gate can be fabricated by MC-CNTFETs.