KLMC model has been presented as a detailed atomistic model, which is powerful for the study of diffusion. The improvement of KLMC is presented to simulate the annealing process. The cluster model is set up in the modified KLMC. Clusters are treated as individual objects, which can capture or emit free particles. Based on this model, the annealing simulation is successfully carried out. The evolution of defects in the annealing is studied. Moreover, the transient enhanced diffusion of boron after annealing, which is a limitation in shallow junction formation for sub 0.1 micron devices, is achieved from the annealing simulation. It indicates that the atomistic model is feasible in annealing process simulation.
Christian C. FritschJörg Langowski
Zhiyong WangYouhong LiJames B. Adams
Charlotte BecquartNormand MousseauChristophe Domain
Charlotte BecquartNormand MousseauChristophe Domain