Tri-gate poly-Si thin-film transistor with nanowire channels

Hsing-Hui Hsu; Homg-Chih Lin; Tiao−Yuan Huang

doi:10.1109/snw.2008.5418410

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Tri-gate poly-Si thin-film transistor with nanowire channels

Hsing-Hui Hsu Homg-Chih Lin Tiao−Yuan Huang

Year: 2008 Vol: 17 Pages: 1-2

DOI: 10.1109/snw.2008.5418410

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Abstract

In this work, a novel tri-gated poly-Si NWTFT was fabricated and characterized. The fabricated devices exhibit excellent ON/OFF current ratio higher than 10 ⁸ and steep subthreshold swing as low as 90mV/dec. Additionally, a multiple-channel layout scheme was also proposed and demonstrated to multiply the driving current without degrading device performance.

Keywords:

Transistor Thin-film transistor Materials science Optoelectronics Nanowire Channel (broadcasting) Subthreshold swing Swing Subthreshold conduction Logic gate Current (fluid) Electrical engineering Nanotechnology MOSFET Physics Layer (electronics) Engineering Voltage

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Tri-gate poly-Si thin-film transistor with nanowire channels

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