Process Development and Integration of Piezoelectric Aluminum Nitride Thin-Film for RF MEMS Applications

R.K. Sharma; Jiang Ning; Hanhua Feng; R. Gopalakrishnan

doi:10.1557/proc-741-j5.43

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JOURNAL ARTICLE

Process Development and Integration of Piezoelectric Aluminum Nitride Thin-Film for RF MEMS Applications

R.K. Sharma Jiang Ning Hanhua Feng R. Gopalakrishnan

Year: 2002 Journal: MRS Proceedings Vol: 741 Publisher: Cambridge University Press

DOI: 10.1557/proc-741-j5.43

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Keywords:

Materials science Nitride Stoichiometry Microelectromechanical systems Thin film Substrate (aquarium) Argon Optoelectronics Aluminium Sputtering Dry etching Etching (microfabrication) Analytical Chemistry (journal) Layer (electronics) Nanotechnology Composite material

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Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Process Development and Integration of Piezoelectric Aluminum Nitride Thin-Film for RF MEMS Applications

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