Quantum confined Stark shifts in MOVPE-grown GaAs-AlGaAs multiple quantum wells

M. Whitehead; G. Parry; J.S. Roberts; P. Mistry; P. Li Kam Wa; J. P. R. David

doi:10.1049/el:19870733

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Quantum confined Stark shifts in MOVPE-grown GaAs-AlGaAs multiple quantum wells

M. Whitehead G. Parry J.S. Roberts P. Mistry P. Li Kam Wa J. P. R. David

Year: 1987 Journal: Electronics Letters Vol: 23 (20)Pages: 1048-1050 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19870733

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Abstract

We report the first observation of clear quantum confined Stark shifts in GaAs-AIGaAs quantum-well devices grown using metal-organic vapour-phase epitaxy.

Keywords:

Metalorganic vapour phase epitaxy Quantum well Epitaxy Condensed matter physics Gallium arsenide Quantum Stark effect Materials science Optoelectronics Metal Quantum-confined Stark effect Physics Optics Nanotechnology Quantum mechanics Electric field Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum confined Stark shifts in MOVPE-grown GaAs-AlGaAs multiple quantum wells

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