Design of prototype scientific CMOS image sensors

Abstract

We present the design and test results of a prototype 4T CMOS image sensor fabricated in 0.18-μm technology featuring 20 different 6.5 μm pixel pitch designs. We review the measured data which clearly show the impact of the pixel topologies on sensor performance parameters such as conversion gain, read noise, dark current, full well capacity, non-linearity, PRNU, DSNU, image lag, QE and MTF. Read noise of less than 1.5e- rms and peak QE greater than 70%, with microlens, are reported.