Magnetization reversal in exchange biased multilayers detected by giant magnetoresistance effects

Abstract

A structure of exchange biased FM1/AFM1/FM2/AFM2 multilayers is proposed and giant magnetoresistance effect is used as a probe of magnetization reversal. A spin valve structure of NiFe (2 nm)/CoFe (1 nm)/Cu (2.2 nm)/NiFe (12 nm/IrMn (3 nm)/NiFe (6 nm)/IrMn (12 nm) is fabricated to investigate the magnetization reversal in NiFe (12 nm)/IrMn (3 nm)/NiFe (6 nm)/IrMn (12 nm) multilayers. In the decreasing field process, magnetization reversal can well be understood by the reversal of magnetization due to decreasing magnetization and increasing resistance. In the Increasing field process, magnetization and resistance increase sharply at the field around -20 Oe. Hysteresis loop of the sample are also investigated.