JOURNAL ARTICLE

A Low-Area, 0.18μm CMOS, 10Gb/s Optical Receiver Analog Front End

Abstract

A fully integrated, low-cost (area), low-power, high-gain, differential optical receiver analog front-end (AFE), including transimpedance amplifier (TIA), limiting amplifier (LA), DC-offset cancellation feedback and output-buffer is designed in TSMC 0.18μm CMOS technology. The optimized TIA has a regulated cascode (RGC) topology, with 5.9mW power-dissipation, 48 dBΩ gain, 8.46GHz bandwidth. The proposed limiting amplifier (LA) has an inductor-less topology, with 41.9dB gain, 91.1mW power consumption (including output buffer), output swing of 0.4V p-p , and bandwidth of 7.88GHz (output-buffer applied), using built-in active inductors and negative Miller capacitance to broaden the bandwidth. The AFE has 89.94 dBΩ gain, 6.84GHz bandwidth, 0.4V p-p output voltage swing to 50Ω transmission lines, 103.2mW power consumption with 1.8V supply voltage, and sensitivity of 14.5μA for BER of 10 -12 .

Keywords:
Transimpedance amplifier CMOS Electrical engineering Amplifier Bandwidth (computing) Capacitor Electronic engineering Inductor Topology (electrical circuits) Physics Operational amplifier Computer science Engineering Voltage Telecommunications

Metrics

4
Cited By
0.62
FWCI (Field Weighted Citation Impact)
11
Refs
0.75
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Radio Frequency Integrated Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Analog and Mixed-Signal Circuit Design
Physical Sciences →  Engineering →  Biomedical Engineering
Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

Related Documents

JOURNAL ARTICLE

A 10Gb/s Low-Power Front-End Amplifier for Optical Receiver in 0.18μm CMOS Technology

Lei ZhuYing Mei ChenLing TianLi Zhang

Journal:   Advanced materials research Year: 2012 Vol: 588-589 Pages: 872-875
JOURNAL ARTICLE

A 48μW Analog Front End Circuit Design for an Ultrasonic Receiver 0.18μm CMOS

Haridas Kuruveettil

Journal:   International Journal of Information and Electronics Engineering Year: 2013
JOURNAL ARTICLE

Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Wen Yuan LiQian Zhao

Journal:   Advanced materials research Year: 2013 Vol: 760-762 Pages: 577-581
© 2026 ScienceGate Book Chapters — All rights reserved.