Conducting Thin Films of Ruthenium Oxide Prepared by Mocvd

Abstract

ABSTRACT Conducting thin films of RuO 2 were grown at temperatures down to 623K on glass by metalorganic chemical vapor deposition (MOCVD). Tris-trifluoroacetylacetonate-ruthenium(III) (Ru(tfa) 3 ) served as precursor. Smooth, specular and well adherent films were deposited, if the reaction gas contained water. The films were investigated by X-ray diffraction, SEM, and fourprobe resistivity measurement. Growth kinetics were also studied by in situ ellipsometry. The results are compared with films prepared by d.c. reactive sputtering before and after annealing. The properties of the MOCVD films, in particular the resistivity (ρ down to 72 μΩcm), are comparable to CVD films deposited at much higher temperatures and sputtered films after high temperature annealing.