JOURNAL ARTICLE

Ferroelectricity in Gd-Doped HfO2Thin Films

Stefan MuellerChristoph AdelmannAarti SinghSven Van ElshochtUwe SchroederThomas Mikolajick

Year: 2012 Journal:   ECS Journal of Solid State Science and Technology Vol: 1 (6)Pages: N123-N126   Publisher: Institute of Physics

Abstract

The incorporation of Gd into HfO2 thin films is shown to induce ferroelectricity. A significant influence of electric field cycling on both polarization as well as small-signal capacitance-voltage measurements can be observed. X-ray diffraction measurements are supported by infrared absorption analysis and give further evidence of the previously proposed non-centrosymmetric transition phase of space group Pbc21.

Keywords:
Materials science Ferroelectricity Polarization (electrochemistry) Thin film Doping Diffraction Electric field Phase transition Optoelectronics Capacitance Analytical Chemistry (journal) Condensed matter physics Optics Dielectric Nanotechnology Electrode Physical chemistry

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Citation History

Topics

Ferroelectric and Negative Capacitance Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ferroelectric and Piezoelectric Materials
Physical Sciences →  Materials Science →  Materials Chemistry
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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