Thin-film Cu₂O/Cu photovoltaic cells

Abstract

Thin-film Cu 2 O/Cu Schottky barrier photovoltaic back cells are studied in view of their possible application as solar cells. Graphs are constructed showing the dependence of the oxide layer thickness (in the 3 – 50 μm range) on the oxidation parameters such as the temperature, oxygen pressure, and time of oxidation. The solar-cell parameters such as V oc , V sc and the spectral response are in turn investigated as functions of the oxide layer thickness. The results indicate that cells of possible practical interest will have an oxide layer thickness of the order of 1 μm, grown at high temperature, high oxygen pressure for oxidation times of less than 1 s.