A millimeter wave active load-pull measurement system for large signal characterization of millimeter wave transistors is presented. The characterization system uses two six-port junctions for simultaneous impedance and power flow measurements. The advantages of the proposed measurement system are summarized. Large signal characterization of a GaAs FET at 28 GHz in terms of constant absorbed power contours, constant operating gain contours, and constant DC drain current contours in the complex Gamma /sub L/ plane are presented.< >
Fadhel M. GhannouchiR.G. Bosisio
R. ActisR.A. McMorranR.A. MurphyM.A. HollisR. W. ChickC. O. BozlerK. B. Nichols
Luca GalatroM. MarchettiMarco Spirito