JOURNAL ARTICLE
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>as gate dielectrics
Abstract
The authors have successfully demonstrated self-aligned high-performance inversion-channel In 0.53 Ga 0.47 As MOSFETs using UHV-deposited nano-meter thick AI 2 O 3 /GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In 0.2 Ga 0.8 As MOSFETs using as a similar dual layer gate dielectric also exhibits very high current densities and transconductance.
Keywords:
Transconductance Materials science Electrical engineering Engineering
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6
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0.86
FWCI (Field Weighted Citation Impact)
2
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0.79
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Citation History
Topics
Ferroelectric and Negative Capacitance Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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