JOURNAL ARTICLE

Crystallographic Facetting in Sintered Barium Titanate

Jing‐Kai LiouMing‐Hong LinHong‐Yang Lu

Year: 2002 Journal:   Journal of the American Ceramic Society Vol: 85 (12)Pages: 2931-2937   Publisher: Wiley

Abstract

A commercial TiO 2 ‐excess BaTiO 3 powder has been sintered and its microstructure analyzed for crystallographic facetting via both scanning and transmission electron microscopy (SEM and TEM). Facetted grain surfaces are developed initially from {111} at a low temperature of 1215°C, which are then altered to {111} and {100} at 1290°C in the presence of a grain‐boundary liquid phase. The grain shape is also modified correspondingly from platelike to polygonal. Facetting of the intragranularly located residual pores in BaTiO 3 along the {141} planes further develops on the (quasi‐)equilibrium shape after annealing at 1400°C for 100 h from the initially well‐characterized {111}, {110}, and {100} in as‐sintered samples sintered at the same temperature for 10 h. The Wulff plots derived from the residual pores in as‐sintered and annealed samples are constructed for the 〈011〉 zone. Microstructural analysis also suggests that the shape of grains and intragranular residual pores is modified progressively upon annealing. The initial solid–vapor surface energy has become less anisotropic crystallographically. Abnormal grain growth in relation to the surface energy anisotropy is discussed.

Keywords:
Faceting Materials science Microstructure Annealing (glass) Transmission electron microscopy Grain boundary Grain growth Crystallography Surface energy Barium titanate Scanning electron microscope Abnormal grain growth Mineralogy Composite material Nanotechnology Chemistry Ceramic

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Citation History

Topics

Ferroelectric and Piezoelectric Materials
Physical Sciences →  Materials Science →  Materials Chemistry
Advanced ceramic materials synthesis
Physical Sciences →  Materials Science →  Ceramics and Composites
Advanced materials and composites
Physical Sciences →  Engineering →  Mechanical Engineering

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