JOURNAL ARTICLE
Resonant interband tunneling FET
S. TehraniJun ShenH. GoronkinG. KrämerR. TsuiTiancong Zhu
Year: 1995 Journal: IEEE Electron Device Letters Vol: 16 (12)Pages: 557-559 Publisher: Institute of Electrical and Electronics Engineers
Abstract
A lateral three-terminal Resonant Interband Tunneling Field Effect Transistor (RITFET) has been fabricated. It consists of a resonant interband tunnel diode (RITD) built using the GaSb-AlSb-InAs material system and a pseudomorphic InGaAs channel FET in which the current is controlled by a Schottky gate. The three terminal device has current-voltage characteristics that exhibit negative differential conductance with a peak-to-valley current ratio of 8 at room temperature.
Keywords:
Quantum tunnelling Schottky diode Optoelectronics Materials science Resonant-tunneling diode Diode Field-effect transistor Tunnel diode Transistor Current (fluid) Terminal (telecommunication) Gallium arsenide Schottky barrier Condensed matter physics Voltage Electrical engineering Physics Quantum well Optics Engineering
Metrics
9
Cited By
0.90
FWCI (Field Weighted Citation Impact)
10
Refs
0.74
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Surface and Thin Film Phenomena
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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