Oxidation Behavior of ZrB 2 –SiC–TaC Ceramics
Yiguang WangBaisheng MaLulu LiLinan An
Abstract
ZrB 2 –SiC–TaC ceramics with different content of TaC were prepared by hot‐pressing at 1800°C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200°C–1500°C in air. It was found that low concentration of TaC (10 vol%) deteriorated the oxidation resistance of ZrB 2 – SiC , while high concentration of TaC (30 vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.
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