Molecular beam epitaxy of ZnCdSe/ZnSe wires on patterned GaAs substrates

David Stifter; Wolfgang Heiß; A. Bonanni; G. Prechtl; M. Schmid; Kurt Hingerl; Heinz Seyringer; H. Sitter; J. Liu; E. Gornik; László S. Tóth; Á. Barna

doi:10.1016/s0022-0248(98)80074-2

JOURNAL ARTICLE

Molecular beam epitaxy of ZnCdSe/ZnSe wires on patterned GaAs substrates

David Stifter Wolfgang Heiß A. Bonanni G. Prechtl M. Schmid Kurt Hingerl Heinz Seyringer H. Sitter J. Liu E. Gornik László S. Tóth Á. Barna

Year: 1998 Journal: Journal of Crystal Growth Vol: 184-185 Pages: 347-351 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(98)80074-2

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Keywords:

Molecular beam epitaxy Photoluminescence Transmission electron microscopy Quantum well Materials science Optoelectronics Scanning electron microscope Blueshift Epitaxy Grating Optics Chemistry Crystallography Nanotechnology Composite material Laser Layer (electronics) Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Optical Coatings and Gratings

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Molecular beam epitaxy of ZnCdSe/ZnSe wires on patterned GaAs substrates

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