JOURNAL ARTICLE

Single frequency operation of continuous-wave high-power Optically-Pumped Semiconductor Lasers

Abstract

We report on our research in power scaling OPSL around 1µm to exceed 100W per chip by combining a rigorous quantum design of an optimized MQW epitaxial structure, highly accurate and reproducible wafer growth and an efficient thermal management strategy. Recently, we have utilized these state-of-the-art optimized OPSL chips to achieve a new record single frequency output power of 15W. The highly coherent TEM00 mode exhibit a M2 of 1.2 with a very narrow linewidth (<7.5MHz).

Keywords:
Laser linewidth Optoelectronics Wafer Laser Materials science Frequency scaling Power (physics) Semiconductor laser theory Continuous wave Chip Epitaxy Quantum well Optical pumping Scaling Semiconductor Optics Physics Electrical engineering Engineering Nanotechnology

Metrics

0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
2
Refs
0.16
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Fiber Laser Technologies
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

Related Documents

JOURNAL ARTICLE

High power single-frequency operation of continuous wave diode-pumped Nd:YAG ring lasers

H. ZellmerI. FreitagD. GollaS. KnokeW. SchöneAndreas TünnermannH. Welling

Journal:   1994 Conference on Lasers and Electro-Optics Europe Year: 1994 Vol: 101 Pages: CFH5-CFH5
JOURNAL ARTICLE

High-power optically pumped semiconductor lasers

J. L. A. ChillaS.D. ButterworthAlexander ZeitschelJohn P. CharlesAndrea CapraraMurray K. ReedLuis Spinelli

Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Year: 2004 Vol: 5332 Pages: 143-143
JOURNAL ARTICLE

Single-frequency high-power continuous-wave oscillation at 1003 nm of an optically pumped semiconductor laser

Mathieu JacquemetM. DomenechJ. DionM. StrassnerG. Lucas-LeclinPatrick GeorgesI. SagnesA. Garnache

Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Year: 2006 Vol: 6184 Pages: 61841X-61841X
© 2026 ScienceGate Book Chapters — All rights reserved.