JOURNAL ARTICLE
Frequency Doublers with GaAs FET's
Abstract
A comprehensive study is presented of single-gate GaAs FET frequency doublers, including self-oscillating doublers, focusing specifically on their applicability to mm-wave power generation. Large-signal simulations are used to identify critical design aspects; with three experimental circuits substantiating the assumptions and predictions.
Keywords:
Gallium arsenide Electronic circuit Electronic engineering Electrical engineering Optoelectronics Physics Materials science Computer science Engineering
Metrics
18
Cited By
0.97
FWCI (Field Weighted Citation Impact)
5
Refs
0.80
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Microwave Engineering and Waveguides
Physical Sciences → Engineering → Electrical and Electronic Engineering
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