JOURNAL ARTICLE

Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes

Abstract

A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.

Keywords:
Quantum dot Materials science Layer (electronics) PEDOT:PSS Nanoparticle Optoelectronics Light-emitting diode Tungsten Diode Nanotechnology Oxide Metallurgy

Metrics

122
Cited By
3.21
FWCI (Field Weighted Citation Impact)
37
Refs
0.93
Citation Normalized Percentile
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Citation History

Topics

Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Transition Metal Oxide Nanomaterials
Physical Sciences →  Materials Science →  Polymers and Plastics
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