<title>Monolithic OEICs using GaAs VLSI technology</title>

Abstract

Optical interconnects for use in high speed computing and communication systems require dense optoelectronic integrated circuits (OEICs). Monolithic integration of III-V optoelectronics with VLSI optoelectronics with VLSI- complexity electronics will yield OEICs of the high density, performance, manufacturability, and reliability. The epitaxy-on-electronics (EoE) technique monolithically integrates optoelectronic devices with commercially- fabricated, fully-metallized GaAs VLSI integrated circuits. This manuscript reviews the EoE process and details the fabrication of integrated LEDs. This LED-OEIC process is being used by optical interconnect systems researchers on a prototype basis through the OPTOCHIP project: the current status of this effort is reviewed.