Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Ruggero Anzalone; Massimo Camarda; Christopher Locke; Jose M. Carballo; Nicolò Piluso; Antonino La Magna; Alex A. Volinsky; Stephen E. Saddow; Francesco La Via

doi:10.1557/jmr.2012.224

JOURNAL ARTICLE

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Ruggero Anzalone Massimo Camarda Christopher Locke Jose M. Carballo Nicolò Piluso Antonino La Magna Alex A. Volinsky Stephen E. Saddow Francesco La Via

Year: 2012 Journal: Journal of materials research/Pratt's guide to venture capital sources Vol: 28 (1)Pages: 129-135 Publisher: Springer Nature

DOI: 10.1557/jmr.2012.224

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Keywords:

Materials science Stress (linguistics) Composite material Engineering physics Optoelectronics

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

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