Two-dimensional semiconductor analysis using finite-element method

Abstract

Two-dimensional simulation of semiconductor devices using a finite-element formulation is described. In the present analysis, Poisson's equation is solved by a finite-element method, based on the variational principle, and current continuity equations are solved by a method of weighted residuals. The advantage of this method is mentioned. In order to demonstrate the validity of this method, a bipolar n-p-n transistor is analyzed, considering the generation-recombination term. Not only voltage-current characteristic, but also junction capacitance and cutoff frequency are calculated. Then transistor behavior under inverse mode by using the n-type buried layer as a common emitter is discussed.