Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

D. Cherns; J. S. Barnard; F. A. Ponce

doi:10.1016/s0038-1098(99)00130-1

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Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

D. Cherns J. S. Barnard F. A. Ponce

Year: 1999 Journal: Solid State Communications Vol: 111 (5)Pages: 281-285 Publisher: Elsevier BV

DOI: 10.1016/s0038-1098(99)00130-1

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Keywords:

Electron holography Piezoelectricity Materials science Transmission electron microscopy Electron Optoelectronics Holography Field (mathematics) Scanning transmission electron microscopy Relaxation (psychology) Condensed matter physics Optics Physics Nanotechnology Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

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