Abstract

In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.

Keywords:
Microelectronics Nickel Silicide Nano- Deposition (geology) Materials science Layer (electronics) Nanotechnology Computer science Engineering Metallurgy Chemical engineering Geology

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Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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