We report a waveguide-integrated, gigahertz GeSi electroabsorption modulator on SOI with a 10 dB extinction ratio at 1540 nm, a ultralow energy consumption of 50 fJ/bit, and an operation spectrum range of 1539-1553 nm.
Jifeng LiuMark BealsAndrew PomereneSarah BernardisRong SunJing ChengLionel C. KimerlingJürgen Michel
J.E. JohnsonPaul A. MortonT. Tanbun-EkW. T. Tsang
Jifeng LiuSarah BernardisJing ChengRong SunMark BealsLionel C. KimerlingJürgen MichelAndrew Pomerene
D. L. RobinsonWendy MarshallJ. KatzJ. S. SmithA. Yariv