High-efficiency monolithic GaAs IMPATT diodes

B. Bayraktaroglu; H. D. Shih

doi:10.1049/el:19850184

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High-efficiency monolithic GaAs IMPATT diodes

B. Bayraktaroglu H. D. Shih

Year: 1985 Journal: Electronics Letters Vol: 21 (7)Pages: 259-260 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19850184

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Abstract

Impedance-matching circuits were integrated on the same chip as the IMPATT diodes to produce monolithic impatt diodes for millimetre-wave applications. A drastic reduction of device-to-circuit parasitic elements was achieved by placing the external circuitry very close to the device. Oscillators fabricated in this fashion gave the highest efficiencies reported so far in the 30–35 GHz range with 28% conversion efficiency using hybrid-Read structures.

Keywords:

IMPATT diode Diode Optoelectronics Materials science Electronic circuit Gallium arsenide Monolithic microwave integrated circuit Integrated circuit Impedance matching Electrical impedance Electrical engineering Electronic engineering Engineering CMOS

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Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Microwave Engineering and Waveguides

Physical Sciences → Engineering → Electrical and Electronic Engineering

Superconducting and THz Device Technology

Physical Sciences → Physics and Astronomy → Astronomy and Astrophysics

High-efficiency monolithic GaAs IMPATT diodes

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