Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD

J. Vuillod

doi:10.4028/www.scientific.net/msf.140-142.301

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JOURNAL ARTICLE

Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD

J. Vuillod

Year: 1993 Journal: Materials science forum Vol: 140-142 Pages: 301-318 Publisher: Trans Tech Publications

DOI: 10.4028/www.scientific.net/msf.140-142.301

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Keywords:

Materials science Plasma Silicon nitride Silicon oxynitride Nitride Chemical engineering Silicon Nanotechnology Engineering physics Optoelectronics Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

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