JOURNAL ARTICLE

Low power concurrent compact dual‐band receiver front‐end using 0.18‐μm CMOS process

Kuo‐Hua Cheng

Year: 2009 Journal:   Microwave and Optical Technology Letters Vol: 51 (6)Pages: 1527-1530   Publisher: Wiley

Abstract

Abstract A fully monolithic dual‐band concurrent receiver front‐end chip for IEEE 802.11a/b/g applications is presented using 0.18‐μm CMOS 1P6M technology. This dual‐band receiver front‐end design uses sub‐harmonic mixer and only one multi‐modulus synthesizer. This low IF circuit design has the advantage of low‐cost and low‐power as comparing with the direct conversion architecture. For a 1.8 V power supply, the overall power consumptions is 66.1 mW. The overall receiver‐chain noise figures are 2.8 dB and 4.3 dB; P1db are −28dBm and −27dBm at 2.45 GHz and 5.25 GHz, and voltage gain is 28.5 dB and 28.1 dB, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1527–1530, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24399

Keywords:
Electrical engineering CMOS Multi-band device Microwave Front and back ends Noise figure RF front end Chip Engineering Power (physics) Electronic engineering Physics Radio frequency Telecommunications Amplifier

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Topics

Radio Frequency Integrated Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Microwave Engineering and Waveguides
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Power Amplifier Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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