High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

Abstract

In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-kappa-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm ² / Vmiddots, and large I _on / I _off ratio of 5 times 10 ⁷ . These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.