Polarization dependence of optoelectronic properties in quantum dots and quantum wires-consequences of valence-band mixing

Abstract

The electronic bandstructure in quantum dots and quantum wires is studied, including the valence-band mixing effects. Based on the bandstructure, results for the polarization dependence of absorption and gain (at room temperature) are examined. The related differential gain and the /spl alpha/-parameter is also studied. Our results show that it is extremely important to include valence-band mixing effects in predicting the laser performance of such structures.< >