JOURNAL ARTICLE

Pressure-induced phase transition in Ga1−xInxAs:ab initiostudy

Anurag SrivastavaNeha Tyagi

Year: 2012 Journal:   High Pressure Research Pages: 1-10   Publisher: Taylor & Francis

Abstract

The high pressure phase transitions in Ga 1−x In x As (x=0.25, 0.5 and 0.75) alloys have been investigated using the ab initio density functional theory approach. The total energies and ground state properties have been analyzed using both the local density as well as generalized gradient approximations as exchange-correlation functionals. The study computes the structural phase transition in Ga 1−x In x As from its most stable zinc-blende- (B3) type phase to hypothetical rocksalt- (B1) type phase in the pressure range of 3–14 GPa. The observed transition pressures for the host binary compounds are in close agreement with their experimental/theoretical counterparts. The effect of introduction of indium in GaAs has also been analyzed on the lattice parameter, bulk modulus and transition pressure.

Keywords:
Ab initio Bulk modulus Phase transition Density functional theory Indium Ground state Ab initio quantum chemistry methods Materials science Local-density approximation Lattice constant Condensed matter physics Phase (matter) Thermodynamics Lattice (music) Chemistry Atomic physics Computational chemistry Physics Molecule Diffraction Quantum mechanics

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Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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