Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

Xin Zhang; Tong‐Yi Zhang; Yitshak Zohar

doi:10.1557/proc-546-27

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Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

Xin Zhang Tong‐Yi Zhang Yitshak Zohar

Year: 1998 Journal: MRS Proceedings Vol: 546 Publisher: Cambridge University Press

DOI: 10.1557/proc-546-27

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Keywords:

Materials science Residual stress Wafer Microstructure Composite material Stress relaxation Doping Annealing (glass) Thin film Optoelectronics Nanotechnology Creep

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Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

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