Polarization Insensitivity in Interdiffused, Strained InGaAs/InP Quantum Wells

Joseph Micallef; James L. Borg; Wai Chee Shiu

doi:10.1557/proc-450-371

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Polarization Insensitivity in Interdiffused, Strained InGaAs/InP Quantum Wells

Joseph Micallef James L. Borg Wai Chee Shiu

Year: 1996 Journal: MRS Proceedings Vol: 450 Publisher: Cambridge University Press

DOI: 10.1557/proc-450-371

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Keywords:

Materials science Merge (version control) Quantum well Polarization (electrochemistry) Electric field Absorption edge Condensed matter physics Attenuation coefficient Spectral line Absorption spectroscopy Optoelectronics Optics Band gap Physics Chemistry Quantum mechanics Physical chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Polarization Insensitivity in Interdiffused, Strained InGaAs/InP Quantum Wells

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