Transparent and Flexible Carbon Nanotube Transistors

Abstract

We report the fabrication of transparent and flexible transistors where both the bottom gate and the conducting channel are carbon nanotube networks of different densities and Parylene N is the gate insulator. Device mobilities of 1 cm(2) V(-1) s(-1) and on/off ratios of 100 are obtained, with the latter influenced by the properties of the insulating layer. Repetitive bending has minor influence on the characteristics, with full recovery after repeated bending. The operation is insensitive to visible light and the gating does not influence the transmission in the visible spectral range.