6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage

Gheorghe Brezeanu; M. Bădilă; José del R. Millán; Philippe Godignon; Marie Laure Locatelli; Jean-Pierre Chante; A. А. Lebedev; V. Banu

doi:10.4028/www.scientific.net/msf.338-342.1219

JOURNAL ARTICLE

6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage

Gheorghe Brezeanu M. Bădilă José del R. Millán Philippe Godignon Marie Laure Locatelli Jean-Pierre Chante A. А. Lebedev V. Banu

Year: 2000 Journal: Materials science forum Vol: 338-342 Pages: 1219-1222 Publisher: Trans Tech Publications

DOI: 10.4028/www.scientific.net/msf.338-342.1219

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Keywords:

Materials science Schottky barrier Optoelectronics Breakdown voltage Ideal (ethics) Diode Schottky diode Metal–semiconductor junction Silicon carbide Voltage Engineering physics Electrical engineering Composite material

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage

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