Photo-electrical properties of thin ZnO:Al films

D. Donoval; F. Uherek; B. Rheinländer

doi:10.1109/asdam.1998.730168

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Photo-electrical properties of thin ZnO:Al films

D. Donoval F. Uherek B. Rheinländer

Year: 2002 Vol: 102 Pages: 67-70

DOI: 10.1109/asdam.1998.730168

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Abstract

Photo-electrical properties of ZnO and ZnO:Al thin film prepared by rf sputtering are investigated. The prepared samples exhibit a very wide change of sheet resistance within ten orders of magnitude depending on preparation procedure. A low value of doping independent mobility has been observed. An optical band gap shift towards higher energies is presented.

Keywords:

Materials science Thin film Sheet resistance Doping Band gap Sputtering Wide-bandgap semiconductor Optoelectronics Electrical resistivity and conductivity Electrical resistance and conductance Composite material Nanotechnology Electrical engineering Layer (electronics)

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ZnO doping and properties

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Photo-electrical properties of thin ZnO:Al films

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