JOURNAL ARTICLE

Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

L.B. RowlandR. S. KernS. TanakR. F. Davis

Year: 1993 Journal:   Journal of materials research/Pratt's guide to venture capital sources Vol: 8 (9)Pages: 2310-2314   Publisher: Springer Nature
Keywords:
Vicinal Materials science Electron cyclotron resonance Molecular beam epitaxy Epitaxy Plasma Wafer Monocrystalline silicon Analytical Chemistry (journal) Optoelectronics Silicon Nanotechnology Chemistry

Metrics

48
Cited By
10.09
FWCI (Field Weighted Citation Impact)
18
Refs
0.99
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Advanced ceramic materials synthesis
Physical Sciences →  Materials Science →  Ceramics and Composites
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