Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

L.B. Rowland; R. S. Kern; S. Tanak; R. F. Davis

doi:10.1557/jmr.1993.2310

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Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

L.B. Rowland R. S. Kern S. Tanak R. F. Davis

Year: 1993 Journal: Journal of materials research/Pratt's guide to venture capital sources Vol: 8 (9)Pages: 2310-2314 Publisher: Springer Nature

DOI: 10.1557/jmr.1993.2310

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Keywords:

Vicinal Materials science Electron cyclotron resonance Molecular beam epitaxy Epitaxy Plasma Wafer Monocrystalline silicon Analytical Chemistry (journal) Optoelectronics Silicon Nanotechnology Chemistry

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Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Advanced ceramic materials synthesis

Physical Sciences → Materials Science → Ceramics and Composites

Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

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