Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer

JOURNAL ARTICLE

Year: 2013 Journal: Applied Physics A Vol: 113 (2)Pages: 315-319 Publisher: Springer Science+Business Media

DOI: 10.1007/s00339-013-7923-9

Keywords:

Light-emitting diode Optoelectronics Materials science Voltage droop Superlattice Diode Band bending Quantum efficiency Voltage Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics