Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates

S. Simhony; E. Kapon; E. Colas; R. Bhat; N. G. Stoffel; D. M. Hwang

doi:10.1109/68.54687

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Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates

S. Simhony E. Kapon E. Colas R. Bhat N. G. Stoffel D. M. Hwang

Year: 1990 Journal: IEEE Photonics Technology Letters Vol: 2 (5)Pages: 305-306 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/68.54687

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Abstract

Structure and lasing characteristics of double-quantum-wire lasers are reported. Threshold current as low as 2.4 mA and continuous wave operation at room temperature were achieved for lasers with uncoated facets. Subbands due to lateral quantum confinement were observed in the laser spectra. Good agreement between measured dependence of threshold current on cavity length and a simple model accounting for gain saturation was found.< >

Keywords:

Lasing threshold Laser Chemical vapor deposition Optoelectronics Materials science Diode Semiconductor laser theory Quantum well Gallium arsenide Spectral line Optics Physics Wavelength

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates

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