Photoemission on AB semiconductor material. Cd₃As₂, Zn₃As₂, Cd₃P₂, Zn₃P₂ crystals and thin films

Abstract

Abstract The density of valence states of sputter‐annealed Cd 3 As 2 , Zn 3 As 2 , (Cd 0.54 Zn 0.46 ) 3 As 2 , Cd 3 P 2 , and Zn 3 P 2 crystals as well as in situ UHV deposited Cd 3 As 2 and Zn 3 P 2 thin films are determined with UV (He/Ne I, II) and X‐ray (Zr Mζ, Al/Mg Kα) photoemission. Some A B valence electron density of states data reported in literature and measured by X‐ray emission and UP/XP spectroscopy are verified by the experiments. All A B materials studied provide UPS/XPS curves, which are qualitatively similar to those reported for A II B VI compounds.