Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

Abstract

We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10−6 Ω cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes.