Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs

F. Ren; Moo Sun Hong; J. M. Kuo; W. S. Hobson; H.S. Tsai; J. R. Lothian; J. P. Mannáerts; J. Kwo; S. N. G. Chu; Jenshan Lin; Y.K. Chen; A.Y. Cho

doi:10.1109/drc.1997.612482

JOURNAL ARTICLE

Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs

F. Ren Moo Sun Hong J. M. Kuo W. S. Hobson H.S. Tsai J. R. Lothian J. P. Mannáerts J. Kwo S. N. G. Chu Jenshan Lin Y.K. Chen A.Y. Cho

Year: 2002 Pages: 78-79

DOI: 10.1109/drc.1997.612482

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Abstract

We have investigated InGaAs MOSFETs using a mixture of Ga/sub 2/O/sub 3/ and Gd/sub 2/O/sub 3/ as the gate dielectric evaporated from a high-purity single-crystal Gd/sub 3/Ga/sub 5/O/sub 12/ source. We report the first Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFETs on an InP semi-insulating substrate. A 0.75/spl times/50 /spl mu/m/sup 2/ gate device exhibits an extrinsic transconductance of 190 mS/mm which is an order of magnitude improvement over previously reported values. The current gain cut-off frequency and the maximum frequency of oscillation are 6.8 and 7.8 GHz, respectively.

Keywords:

Transconductance Materials science Gallium arsenide Dielectric Substrate (aquarium) Oscillation (cell signaling) MOSFET Optoelectronics Gate dielectric Analytical Chemistry (journal) Electrical engineering Transistor Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs

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