Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

Chia-Liang Yu; Paul A. Flinn; Seok‐Hee Lee; J. C. Bravman

doi:10.1557/proc-441-403

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Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

Chia-Liang Yu Paul A. Flinn Seok‐Hee Lee J. C. Bravman

Year: 1996 Journal: MRS Proceedings Vol: 441 Publisher: Cambridge University Press

DOI: 10.1557/proc-441-403

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Keywords:

Materials science Composite material Compressive strength Stress (linguistics) Stress relaxation Microstructure Thin film Wafer Chemical vapor deposition Annealing (glass) Ultimate tensile strength Silicon Amorphous solid Metallurgy Creep Optoelectronics Crystallography Nanotechnology

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

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