Solid phase epitaxy of Germanium on Silicon substrates

Ruben Lieten; Qun Ma; J. Guzmán; Joel W. Ager; E. E. Häller; Jean‐Pierre Locquet

doi:10.1557/opl.2011.862

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Solid phase epitaxy of Germanium on Silicon substrates

Ruben Lieten Qun Ma J. Guzmán Joel W. Ager E. E. Häller Jean‐Pierre Locquet

Year: 2011 Journal: MRS Proceedings Vol: 1339 Publisher: Cambridge University Press

DOI: 10.1557/opl.2011.862

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Keywords:

Materials science Germanium Crystallization Plasma-enhanced chemical vapor deposition Amorphous solid Silicon Layer (electronics) Amorphous silicon Epitaxy Chemical vapor deposition Molecular beam epitaxy Nanocrystalline silicon Deposition (geology) Crystalline silicon Chemical engineering Optoelectronics Crystallography Nanotechnology Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Solid phase epitaxy of Germanium on Silicon substrates

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